Imec introduces 2-D materials in the logic device scaling roadmap

The continual scaling of Si-based transistors is challenged by short channel effects that limit further gate length scaling. Field-effect transistors (FETs) with semiconducting transition metal dichalcogenides (MX2, such as WS2 or MoS2) as the semiconductor channel promise however to be relatively immune to these short channel effects. FETs with 2-D semiconductor channel owe this promise […]

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