Executing low-power linear computations using nonlinear ferroelectric memristors

Researchers at Toshiba Corporate R&D Center and Kioxia Corporation in Japan have recently carried out a study exploring the feasibility of using nonlinear ferroelectric tunnel junction (FTJ) memristors to perform low-power linear computations. Their paper, published in Nature Electronics, could inform the development of hardware that can efficiently run artificial intelligence (AI) applications, such as artificial neural networks.