Amorphous boron nitride shows excellent insulating properties for next generation of electronics

In the ongoing process of miniaturization of logic and memory devices in electronic circuits, reducing the dimensions of interconnects—metal wires that link different components on a chip—is crucial to guarantee fast response of the device and improve its performance. Research efforts have been focused on developing materials with excellent insulating properties to separate the interconnects from each other. A suitable material for this application is required to have a dielectric constant (parameter that defines its insulating properties) no higher than 2. Furthermore, it should serve as a diffusion barrier against migration of metals into semiconductors and be thermally, chemically and mechanically stable.